|성명||신민철 교수 ( Mincheol Shin, Professor)|
|주제||First-principles based simulations of nanoscale field effect transistors having hundreds of thousands atoms|
|학력||Northwestern Univ. 물리학과 졸업. 이학박사 (1992)|
1992-2002: 한국전자통신연구원 선임연구원
2002 ~ : 한국과학기술원 전기및전자공학부 교수
Atomistic simulations of field effect transistors (FETs) have become increasingly important as the feature size of the devices approaches a few nanometer scale.
While the empirical tight binding method is suited and has been widely used for atomistic modeling, it has critical limitations when the hetero interfaces/structures are involved,
among other things. Device modeling based on the first-principles density functional theory is therefore called for to provide an ultimate solution.
However the size of the non-orthogonal Hamiltonian matrices becomes prohibitively large for transport simulations of devices having hundreds of thousands of atoms.
In this talk, the numerical aspect and the scheme to overcome the computational hurdle will be presented and simulations of various devices such as nanowire FETs, two-dimensional materials FETs, and III-V devices will be demonstrated.